gusucode.com > PPML_v1.2 > examples/OpticalCritical_APL2013_fig3_a.m
close all; clear all; clc % Calculates and plots the angularly-resolved reflectance % theoretical counterpart of Fig. 3a of "Optical critical coupling into % highly confining metal-insulator-metal % optical resonators" Appl. Phys. Lett. 103, 091110, (2013) % % Simone Zanotto, Firenze, feb. 2016 %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%% % This is free software distributed under the BSD licence (see the % containing folder). % However, shall the results obtained through this code be included % in an academic publication, we kindly ask you to cite the source % website and, if applicable, the following paper: % % J.-M- Manceau, S. Zanotto, I. Sagnes, G. Beaudoin, and R. Colombelli, % "Optical critical coupling into highly confining metal-insulator-metal % optical resonators" Appl. Phys. Lett. 103, 091110, (2015) %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%% addpath('PPML_root') % to be replaced by the proper path % Computation parameters %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%% numnu = 41; % Number of frequency points nu = linspace(2,4.5,numnu); % frequencies in THz numtheta = 55; theta = linspace(13,67,numtheta); % angle in degrees (never set 0) halfnpw = 20; % good for convergence in this problem % NOTE: this parameter is computation-dependent. % Be careful in drawing conclusions!!! %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%% for i = 1:numnu for j = 1:numtheta [i j] % main cycles over energy and angles % dispersive dielectric constants % mind the signs of imag parts (misprint in the APL) wn = nu(i)*100/3; % wavenumber in cm^-1 !!!!!! epsAu = 1 - (7.25e4)^2/( wn^2 + 1i*216*wn ); % Ordal Au epsGaAs = 11*(1 + (292^2 - 268^2)/(268^2 - wn^2 - 1i*2.4*wn)); % GaAs with phonon om = 2*pi*nu(i)*1e12; % ang freq in Hz epsGaAs_dop = 11 - (2.6e24*1.6e-19^2/(8.8e-12*0.067*9.1e-31*(om^2 + 1i*om/100e-15))); % doped GaAs a = 30; % microns L = 4; % number of internal layers h = 4.67; % etching depth % superstr. | patt. Au | patt. GaAs | unp. GaAs | dop. GaAs | subst. f = [ .77 .77 1 1 ]; % fraction of B in A d = [30 .2 h (9-h) 1 30 ]; % microns epsxA = [ 1 1 1 1 ]; % material A epszA = [ 1 1 1 1 ]; % epsxB = [ epsAu epsGaAs epsGaAs epsGaAs_dop ]; % material B epszB = [ epsAu epsGaAs epsGaAs epsGaAs_dop ]; % epssup = 1; epssub = epsAu; k0 = 2*pi*nu(i)*0.01/3; % wavevector in micron ^-1 kpar = k0*sin(theta(j)*pi/180); % calling the scattering matrix subroutine for reflection [RR,TT,AA] = RTA_1d_tm(a,L,... epssup,epssub,epsxA,epszA,epsxB,epszB,f,d,... halfnpw,k0,kpar); R(i,j) = RR; end end %% h = pcolor(theta,nu,R) set(h,'edgecolor','none') xlabel('incidence angle (deg)') ylabel('frequency (THz)')